Carrier concentration in hall effect formula

Following is the derivation of the Hall-effect. This video contains the full hall coefficient and carrier concentration experiment.

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I -nevA ii Where n is number of electrons per unit volume and A is the area of cross-section of the conductor.

. The DC Hall effect is an important phenomenon in condensed matter physics which allows us to measure properties of a semiconductor. For semiconductor devices in addition to the semiconductors resistivity ρ and carrier mobility μ one of the most important adjustable properties is the carrier concentration np for. Hall Effect is used to find carrier concentration.

Hall mobility µH and carrier concentration n H of charge carriers for each film was calculated using Hall coefficient RH as µH σ x R H cm 2 V. Hot Probe Test to determine Carrier Type p n n i Number of thermally generated Holes equals number thermally generated free electrons Number of free. The area of the cross-section in the sample is A td.

The carrier concentration P obtained from the Hall effect measurements were used to calculate the effective mass m of the carriers by using the. Hall Effect is used to calculate the. If the magnetic field is applied along negative z-axis the Lorentz force moves the charge carriers say electrons toward the y-direction.

µ V x E. Is the total carrier concentration. In our experiment we use the van der Pauw method.

The electron and hole concentration remain constant as long as the temperature remain constant. Sec 3 nH - 1 R H x e cm-3 4. For a given semiconductor the Hall field EH is proportional to the current density Jx and.

Carrier Concentration Calculations p - N AN D -n 0 12 2 12 2 2 2 2 2 2 2 - - -- i A D A D i n N D N A N D N A n p N N N N n 2 np n i 0 2 - N N - n n n A D i - - -2. VH Hall voltage. Hall Effect is used to find whether a semiconductor is N-type or P-type.

Step by step guidelines to perform this experiment is given in this video. T thickness w width. At equilibrium force is downwards due to magnetic field which is equal to upward electric force.

Depending on the type of sample p-type n-type the Hall Voltage will be positive or negative and in case of only one charge carrier electrons or holes determines the transport the charge. N n p n n. The charge carrier mobility is equal to the drift velocity per unit electric field.

For an instrinsic semiconductor such as GaAs we know that n p n e n2 but it is not necessarily the case that p n which would imply zero. Where n is free electron concentration substituting Equation 8117 in 8115 gives. At temperature TK in an intrinsic semiconductor n p ni where ni is called intrinsic.

Since for equation 3 E H V. E E H B e v e V H d B e v V H B v d. Calculation of Hall angle and Mobility of charge carrier.

Applications of Hall Effect. Going back to the Hall effect if the current in the strip is I then from Current and Resistance we know that I nev_dA label1126 where n is the number of charge.

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